Other university all, Electrical & Electronics Engineering , Semiconductor Physics and Devices Syllabus

Semiconductor Physics and Devices Lecture notes | Videos | Free pdf Download | Previous years solved question papers | MCQs | Question Banks| Syllabus
Get access to 100s of MCQs, Question banks, notes and videos as per your syllabus.
Try Now for free

Unit - 1 BASICS OF SEMICONDUCTOR PHYSICS

1.1 BASICS OF SEMICONDUCTOR PHYSICS SEMICONDUCTOR CARRIER MODELLINGBONDING MODEL ENERGY BAND MODEL

1.2 CARRIERS

1.3 BAND GAP

1.4 CARRIER PROPERTIES EFFECTIVE MASS INTRINSIC CARRIER CONCENTRATION DOPING

1.5 DENSITY OF STATES

1.6 FERMI FUNCTION

1.7 EQUILIBRIUM CARRIER CONCENTRATION FORMULA FOR N AND P AND NP PRODUCT

1.8 CHARGE NEUTRALITY RELATIONSHIP

1.9 DETERMINATION OF FERMI LEVEL CARRIER CONCENTRATION TEMPERATURE DEPENDENCE.

1.10 CARRIER ACTION DRIFT MOBILITY DRIFT CURRENT RESISTIVITY DIFFUSION CURRENT TOTAL CURRENT

1.11 RELATION BETWEEN THE DIFFUSION CONSTANTS AND MOBILITY EINSTEIN’S RELATIONSHIP

1.12 RECOMBINATIONGENERATION BAND TOBAND RG CENTRES AUGER IMPACT IONIZATION

1.13 EQUATION OF STATE CONTINUITY EQUATION

1.14 MINORITY CARRIER DIFFUSION EQUATION

Unit - 2 PN JUNCTION DIODE

2.1 PN JUNCTION DIODE STEP JUNCTION

2.2 BUILTIN POTENTIAL

2.3 DEPLETION WIDTH DEPLETION APPROXIMATION

2.4 ELECTROSTATIC RELATIONSHIP CHARGE DENSITY DEPLETION WIDTH POTENTIAL ELECTRIC FIELD FOR VA 0 VA 0 AND VA 0

Unit - 3 PHYSICS AND TECHNOLOGIES OF BJT

3.1 PHYSICS AND TECHNOLOGIES OF BJT OPERATIONAL CONSIDERATIONS MODES AND CONFIGURATIONS

3.2 PERFORMANCE PARAMETERS EMITTER EFFICIENCY BASE TRANSPORT FACTOR COMMON BASE CURRENT GAIN COMMON EMITTER CURRENT GAIN AND THEIR DERIVATION FOR AN IDEAL TRANSISTOR

3.3 DEVIATION FROM IDEAL BASE WIDTH MODULATION PUNCH THROUGH AVALANCHE BREAKDOWN GEOMETRICAL EFFECTS RG CURRENT

3.4 SMALL SIGNAL MODELLING

Unit - 4 PHYSICS AND TECHNOLOGIES OF FET

4.2 MOST CAPACITOR ENERGY BAND DIAGRAM GATEVOLTAGE RELATIONSHIP CAPACITANCEVOLTAGE CHARACTERISTICS

4.3 MOSFET THEORY OF OPERATION THRESHOLD VOLTAGE IV CHARACTERISTICS

4.3 NON IDEAL MOS MS WORK FUNCTION DIFFERENCE OXIDE CHARGES THRESHOLD ADJUSTMENT AND CONSIDERATIONS

Unit - 5 INTRODUCTION TO UJT

5.1 INTRODUCTION TO UJTCONSTRUCTION WORKING CHARACTERISTICS AND APPLICATION

5.2 SCR

5.3 TRIAC AND DIAC CONSTRUCTION WORKING CHARACTERISTICS AND APPLICATION

5.4 UJT RELAXATION OSCILLATOR

5.5 OPTOELECTRONIC DEVICES PHOTO DIODES PIN AND AVALANCHE

5.6 SOLAR CELL

5.7 LED

5.8 SOLID STATE LASER DIODES

Download EEE Level 2 syllabus pdf
Get access to 100s of MCQs, Question banks, notes and videos as per your syllabus.
Try Now for free
Other Subjects of level-2
Mathematics-iv
Analog circuits
Digital circuits
Analog communication
Sensor and instrumentation
Engineering mathematics - iii
Share  
Link Copied
More than 1 Million students use Goseeko! Join them to feel the power of smart learning.
Spot anything incorrect? Contact us