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Unit - 1 PN Junction Diode
UNIT 1
PN Junction Diode
1.1 Depletion layer
1.2 Barrier potential
1.3 Forward and reverse bias
1.4 Break down voltage
1.5 IV characteristics of PN junction diode
1.6 Knee voltage
1.7 Ideal PN junction diode
1.8 Diode Capacitance
1.9 Break down diode Avalanche and zener diode
1.10 Photo diode
1.11 Light emitting diode
Unit - 2 Rectifiers And Filters
UNIT 2
Rectifiers and Filters
2.1 Half wave rectifier
2.2 Full wave rectifier
2.3 Regulation
2.4 RC filters
2.5 LC filters
2.6 Pi filters
2.7 Clipping and clamping circuit
2.8 Voltage multiplier
Unit - 3 BJT
UNIT 3
BJT Introduction
3.1 Basic theory and operation of PNP and NPN transistors
3.2 Characteristics of CB CE and CC configuration.
3.3 Biasing Base bias Emitter feedback bias Voltage divider bias
3.4 Load line
3.5 Operating point
3.6 Incremental analysis using h model
Unit - 4 FET
Unit 4
FET
4.1 Introduction
4.2 Operation
4.3 IV characteristics
4.4 JFET parameters
4.5 JFET amplifiers
4.6 MOS FET Introduction
4.7 Operation
4.8 MOSFET parameters
Unit - 5 Integrated Circuit
UNIT 5
Integrated Circuits
5.1 Characteristics of ideal opamp
5.2 Inverting Amplifier
5.3 NonInverting Amplifier
5.4 Summer Amplifier
5.5 Difference Amplifier
5.6 Integrator
5.7 Differentiator
5.8 Feedback Amplifier
Download ECE Second Year syllabus pdf
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Other Subjects of second-year
Network theory
Analog circuits
Mathematics-iii
Digital circuits
Signals and systems
Analog communication
Electromagnetic theory
Object oriented programming
Semiconductor physics and devices
Electrical and electronic material
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