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Unit - 1 Basics Of Semiconductor Physics

UNIT1

BASICS OF SEMICONDUCTOR PHYSICS

1.1 BASICS OF SEMICONDUCTOR PHYSICS SEMICONDUCTOR CARRIER MODELLINGBONDING MODEL ENERGY BAND MODEL

1.2 CARRIERS

1.3 BAND GAP

1.4 CARRIER PROPERTIES EFFECTIVE MASS INTRINSIC CARRIER CONCENTRATION DOPING

1.5 DENSITY OF STATES

1.6 FERMI FUNCTION

1.7 EQUILIBRIUM CARRIER CONCENTRATION FORMULA FOR N AND P AND NP PRODUCT

1.8 CHARGE NEUTRALITY RELATIONSHIP

1.9 DETERMINATION OF FERMI LEVEL CARRIER CONCENTRATION TEMPERATURE DEPENDENCE.

1.10 CARRIER ACTION DRIFT MOBILITY DRIFT CURRENT RESISTIVITY DIFFUSION CURRENT TOTAL CURRENT

1.11 RELATION BETWEEN THE DIFFUSION CONSTANTS AND MOBILITY EINSTEIN’S RELATIONSHIP

1.12 RECOMBINATIONGENERATION BAND TOBAND RG CENTRES AUGER IMPACT IONIZATION

1.13 EQUATION OF STATE CONTINUITY EQUATION

1.14 MINORITY CARRIER DIFFUSION EQUATION

Unit - 2 PN Junction Diode

UNIT2

PN JUNCTION DIODE

2.1 PN JUNCTION DIODE STEP JUNCTION

2.2BUILTIN POTENTIAL

2.3 DEPLETION WIDTH DEPLETION APPROXIMATION

2.5 IDEAL DIODE EQUATION QUALITATIVE AND QUANTITATIVE DERIVATION BAND MODEL ASSUMPTIONS APPROXIMATION BOUNDARY CONDITION

2.6DEVIATION FROM IDEAL RG CURRENT SERIES RESISTANCE HIGH LEVEL INJECTION

2.7JUNCTION BREAKDOWN AVALANCHE AND ZENER

2.8REVERSE BIAS JUNCTION CAPACITANCE

2.9FORWARD BIAS DIFFUSION CAPACITANCE

2.10QUALITATIVE UNDERSTANDING OF TURN ON AND TURNOFF TRANSIENTS

2.11ZENER DIODE

2.12TUNNEL DIODE

2.13VARACTOR DIODE

2.14SCHOTTKY DIODE

Unit - 3 Physics And Technologies Of BJT

UNIT3

PHYSICS AND TECHNOLOGIES OF BJT

3.1 PHYSICS AND TECHNOLOGIES OF BJT OPERATIONAL CONSIDERATIONS MODES AND CONFIGURATIONS

3.2 PERFORMANCE PARAMETERS EMITTER EFFICIENCY BASE TRANSPORT FACTOR COMMON BASE CURRENT GAIN COMMON EMITTER CURRENT GAIN AND THEIR DERIVATION FOR AN IDEAL TRANSISTOR

3.3 DEVIATION FROM IDEAL BASE WIDTH MODULATION PUNCH THROUGH AVALANCHE BREAKDOWN GEOMETRICAL EFFECTS RG CURRENT

3.4 SMALL SIGNAL MODELLING

Unit - 4 Physics And Technologies Of FET

UNIT 4

PHYSICS AND TECHNOLOGIES OF FET

4.1 PHYSICS AND TECHNOLOGIES OF FET JUNCTION FET THEORY OF OPERATION IV RELATIONSHIP

4.2 MOST CAPACITOR ENERGY BAND DIAGRAM GATEVOLTAGE RELATIONSHIP CAPACITANCEVOLTAGE CHARACTERISTICS

4.3 MOSFET THEORY OF OPERATION THRESHOLD VOLTAGE IV CHARACTERISTICS

4.3 NON IDEAL MOS MS WORK FUNCTION DIFFERENCE OXIDE CHARGES THRESHOLD ADJUSTMENT AND CONSIDERATIONS

Unit - 5 Introduction To UJT

UNIT5

INTRODUCTION TO UJT

5.1INTRODUCTION TO UJTCONSTRUCTION WORKING CHARACTERISTICS AND APPLICATION

5.2SCR

5.3TRIAC AND DIAC CONSTRUCTION WORKING CHARACTERISTICS AND APPLICATION

5.4UJT RELAXATION OSCILLATOR

5.5OPTOELECTRONIC DEVICES PHOTO DIODES PIN AND AVALANCHE

5.6SOLAR CELL

5.7LED

5.8SOLID STATE LASER DIODES

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